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Journal Articles

Charge-collection efficiency of single-crystal CVD diamond detector for low-energy charged particles with energies ranging from 100 keV to 2 MeV

Sato, Yuki; Murakami, Hiroyuki*; Shimaoka, Takehiro*; Tsubota, Masakatsu*; Kaneko, Junichi*

Nuclear Instruments and Methods in Physics Research A, 834, p.218 - 222, 2016/10

 Times Cited Count:3 Percentile:28.28(Instruments & Instrumentation)

Journal Articles

Charge-collection efficiency and long-term stability of single-crystal CVD diamond detector under different carrier-drift conditions

Sato, Yuki; Murakami, Hiroyuki*; Shimaoka, Takehiro*; Tsubota, Masakatsu*; Kaneko, Junichi*

Japanese Journal of Applied Physics, 55(4), p.046401_1 - 046401_5, 2016/04

 Times Cited Count:4 Percentile:19.99(Physics, Applied)

We investigated the performance of a charged particle detector fabricated using single-crystal diamond grown by chemical vapor deposition. The detector was able to identify four different $$^{241}$$Am $$alpha$$-particle energies (5.389, 5.443, 5.486, and 5.545 MeV) because of its superior intrinsic energy resolution of $$sim$$0.4% (full width at half maximum). The charge collection efficiency inside the diamond crystal was $$sim$$98% for both electrons and holes. The diamond detector also exhibited no significant degradation in terms of pulse height spectra and energy resolution during operation for more than 100 h in the case of mainly electron drift inside the diamond crystal. In contrast, the shapes of the pulse height spectra measured under hole drift condition deteriorated due to the polarization phenomenon.

Journal Articles

Radiation hardness of n-type SiC Schottky barrier diodes irradiated with MeV He ion microbeam

Pastuovi$'c$, $v{Z}$*; Capan, I.*; Cohen, D.*; Forneris, J.*; Iwamoto, Naoya*; Oshima, Takeshi; Siegele, R.*; Hoshino, Norihiro*; Tsuchida, Hidekazu*

Nuclear Instruments and Methods in Physics Research B, 348, p.233 - 239, 2015/04

 Times Cited Count:7 Percentile:51.25(Instruments & Instrumentation)

Journal Articles

Charge induced in 6H-SiC pn diodes by irradiation of oxygen ion microbeams

Oshima, Takeshi; Sato, Takahiro; Oikawa, Masakazu*; Onoda, Shinobu; Hirao, Toshio; Ito, Hisayoshi

Materials Science Forum, 527-529, p.1347 - 1350, 2006/00

Charge induced in 6H-SiC pn diodes by oxygen ion microbeams was examined in an energy range between 6 and 18 MeV. To minimize the influence of damage, single ion hit Transient Ion Beam Induced Current (TIBIC) measurement system, in which the transient current induced by single ion incidence can be measured, was used in this study. The value of charge increases with increasing reverse applied bias, and the saturation of charge is observed when the depletion layer becomes longer than ion range. An increase of collected charge by the funneling effect (the generation of a transient electric filed) is observed in the case of the depletion layer shorter than ion range. The charge collection efficiency is estimated to be 100 % in the saturation region (the depletion layer longer than ion range). It strongly suggests that high quality particle detectors are fabricated using SiC.

Journal Articles

Characterization of charge generated in silicon carbide n$$^{+}$$p diodes using transient ion beam-induced current

Oshima, Takeshi; Sato, Takahiro; Oikawa, Masakazu*; Yamakawa, Takeshi; Onoda, Shinobu; Wakasa, Takeshi; Laird, J. S.; Hirao, Toshio; Kamiya, Tomihiro; Ito, Hisayoshi; et al.

Nuclear Instruments and Methods in Physics Research A, 541(1-2), p.236 - 240, 2005/04

 Times Cited Count:9 Percentile:55.97(Instruments & Instrumentation)

In order to develop particle detectors based on SiC semiconductor, SiC pn-diodes were irradiated with microbeam of 15MeV oxygen ions. The transient current was measured using the single ion hit transient ion beam induced current (TIBIC) system at TIARA. As the results, peak intensity of transient current induded by ion irradiation increased and falltime decreased with increasing applied bias. By the integration of transient current, the charge collection was estimated. It was found that charges generated in deeper region beyond the depletion layer can be collected by the funneling effect.

Journal Articles

Radiation effect on pn-SiC diode as a detector

Kinoshita, Akimasa*; Iwami, Motohiro*; Kobayashi, Kenichi*; Nakano, Itsuo*; Tanaka, Reisaburo*; Kamiya, Tomihiro; Oi, Akihiko; Oshima, Takeshi; Fukushima, Yasutaka*

Nuclear Instruments and Methods in Physics Research A, 541(1-2), p.213 - 220, 2005/04

 Times Cited Count:27 Percentile:84.86(Instruments & Instrumentation)

no abstracts in English

Journal Articles

Anomalous gain mechanisms during single ion hit in avalanche photodiodes

Laird, J. S.; Hirao, Toshio; Onoda, Shinobu; Wakasa, Takeshi; Yamakawa, Takeshi; Abe, Hiroshi; Oyama, Hidenori*; Kamiya, Tomihiro

JAERI-Review 2004-025, TIARA Annual Report 2003, p.14 - 16, 2004/11

no abstracts in English

Journal Articles

Analysis of transient current induced in silicon carbide diodes by oxygen-ion microbeams

Oshima, Takeshi; Sato, Takahiro; Oikawa, Masakazu*; Yamakawa, Takeshi; Onoda, Shinobu; Wakasa, Takeshi; Laird, J. S.; Hirao, Toshio; Kamiya, Tomihiro; Ito, Hisayoshi; et al.

Proceedings of the 6th International Workshop on Radiation Effects on Semiconductor Devices for Space Application (RASEDA-6), p.177 - 180, 2004/10

no abstracts in English

Journal Articles

Charge collected in Si MOS capacitors and SOI devices p$$^{+}$$n diodes due to heavy ion irradiation

Hirao, Toshio; Laird, J. S.; Onoda, Shinobu; Shibata, Toshihiko*; Wakasa, Takeshi; Yamakawa, Takeshi; Abe, Hiroshi; Takahashi, Yoshihiro*; Onishi, Kazunori*; Ito, Hisayoshi

Proceedings of the 6th International Workshop on Radiation Effects on Semiconductor Devices for Space Application (RASEDA-6), p.105 - 109, 2004/10

no abstracts in English

Journal Articles

Recent studies of single-event phenomena in devices using the heavy-ion microbeam at JAERI

Hirao, Toshio; Laird, J. S.; Mori, Hidenobu; Onoda, Shinobu; Ito, Hisayoshi

Proceedings of 6th European Conference on Radiation and its Effects on Components and System (RADECS 2001) (CD-ROM), 5 Pages, 2002/00

no abstracts in English

Journal Articles

Observation of radiation damage induced by single-ion hits at the heavy ion microbeam system

Kamiya, Tomihiro; Sakai, Takuro; Hirao, Toshio; Oikawa, Masakazu*

Nuclear Instruments and Methods in Physics Research B, 181(1-4), p.280 - 285, 2001/07

 Times Cited Count:2 Percentile:21.1(Instruments & Instrumentation)

no abstracts in English

Journal Articles

A Preliminary observation on AgGaSe$$_{2}$$ as a nuclear radiation detector

; *; *; *

Mater.Res.Soc.Symp.Proc., 16, p.233 - 236, 1983/00

no abstracts in English

JAEA Reports

Fabrication of HgI$$_{2}$$ Nuclear Radiation Detectors

*; ;

JAERI-M 8478, 133 Pages, 1979/10

JAERI-M-8478.pdf:9.04MB

no abstracts in English

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